Methods of manufacturing vertical semiconductor devices

ABSTRACT

Methods of manufacturing vertical semiconductor devices may include forming a mold structure including sacrificial layers and insulating interlayers with a first opening formed therethrough. The sacrificial layers and the insulating interlayers may be stacked repeatedly and alternately on a substrate. The first opening may expose the substrate. Blocking layers may be formed by oxidizing portions of the sacrificial layers exposed by the first opening. A first semiconductor layer pattern, a charge trapping layer pattern and a tunnel insulation layer pattern, respectively, may be formed on the sidewall of the first opening. A second semiconductor layer may be formed on the first polysilicon layer pattern and the bottom of the first opening. The sacrificial layers and the insulating interlayers may be partially removed to form a second opening. The sacrificial layers may be removed to form grooves between the insulating interlayers. Control gate electrodes may be formed in the grooves.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC §119 to Korean PatentApplication No. 10-2010-0087327 filed on Sep. 7, 2010, in the KoreanIntellectual Property Office (KIPO), the entire contents of which isincorporated herein by reference.

BACKGROUND

1. Field

Example embodiments relate to methods of manufacturing verticalsemiconductor devices. More particularly, example embodiments relate tomethods of manufacturing non-volatile memory devices including verticalchannels.

2. Description of the Related Art

In order to improve the integration density of memory devices aplurality of transistors may be arranged in a vertical directionrelative to a substrate. In order to manufacture memory devices withvertically arranged transistors, high aspect ratio holes are formedthrough multi-stacked layers and thin layers are formed in the holes.However, the thin layers may not be easily formed in the holes with auniform thickness if the holes are narrow. The reliability of verticalsemiconductor devices including vertically stacked transistors withnon-uniform thin layers may be low.

SUMMARY

Example embodiments may provide methods of manufacturing high and/orimproved reliability vertical semiconductor devices with high and/orincreased integration density.

According to example embodiments, there is provided a method ofmanufacturing a vertical semiconductor device. In the method, a moldstructure including sacrificial layers and insulating interlayers andhaving a first opening therethrough is formed. The sacrificial layersand the insulating interlayers are stacked repeatedly and alternately ona substrate. The first opening exposes the substrate. Blocking layersare formed by oxidizing portions of the sacrificial layers exposed bythe first opening. A charge trapping layer, a tunnel insulation layerand a first polysilicon layer are formed on a bottom and a sidewall ofthe first opening. Portions of the first polysilicon layer, the chargetrapping layer and the tunnel insulation layer on the bottom of thefirst opening are partially etched to form a first polysilicon layerpattern, a charge trapping layer pattern and a tunnel insulation layerpattern, respectively, on the sidewall of the first opening. A secondpolysilicon layer is formed on the first polysilicon layer pattern andthe bottom of the first opening to form a semiconductor patternincluding the first polysilicon layer pattern and the second polysiliconlayer. The sacrificial layers and the insulating interlayers arepartially removed to form a second opening. The sacrificial layers areremoved to form grooves between the insulating interlayers. Control gateelectrodes are formed in the grooves.

According to example embodiments, the sacrificial layers may be formedusing silicon nitride. According to example embodiments, the blockinglayers may include silicon oxide. According to example embodiments, theblocking layers may be formed by a radical oxidation process. Accordingto example embodiments, a difference between a width of the firstopening after forming the blocking layers and an initial width of thefirst opening is smaller than a thickness of each blocking layer.According to example embodiments, for forming the first polysiliconlayer pattern, the charge trapping layer pattern and the tunnelinsulation layer pattern, a portion of the first polysilicon layer onthe bottom of the first opening may be etched to form the firstpolysilicon layer pattern on the sidewall of the first opening. Portionsof the charge trapping layer and the tunnel insulation layer on thebottom of the first opening may be etched to expose the substrate.

According to example embodiments, an upper blocking layer may be furtherformed between each blocking layer and each control gate electrode. Theupper blocking layer may include a metal oxide. According to exampleembodiments, for forming the control gate electrodes, a conductive layermay be formed to sufficiently fill the grooves and partially fill thesecond opening. The conductive layer in the second opening may bepartially removed so that the conductive layer remains only in thegrooves. According to example embodiments, the conductive layer may beformed by sequentially depositing a barrier metal layer and a metallayer.

According to example embodiments, the barrier metal layer may includetitanium or titanium nitride. The metal layer may include tungsten.According to example embodiments, the upper blocking layer may be formedusing aluminum oxide. According to example embodiments, the upperblocking layer may be formed conformally on the blocking layers andinner walls of the grooves. According to example embodiments, the secondpolysilicon layer may be formed on the sidewall and the bottom of thefirst opening not to completely fill the first opening. According toexample embodiments, a filling layer may be further formed on the secondpolysilicon layer to fill the first opening. According to exampleembodiments, the charge trapping layer and the tunnel insulation layerare partially etched by a wet etching process.

According to example embodiments, in manufacturing the verticalsemiconductor device, the number of layers that may be stacked on aninner wall of a hole having a high aspect ratio may be decreased. Thus,an effective diameter or an effective width of the hole may be increasedso that the characteristics of a semiconductor pattern in the hole maybe enhanced. In addition, the integration degree of the verticalsemiconductor device may be increased because the hole need not beenlarged so as to have a sufficient diameter for obtaining good and/orimproved characteristics of the semiconductor pattern.

According to at least one example embodiment, a method of manufacturinga vertical semiconductor device includes forming a mold structureincluding a plurality of sacrificial layers and a plurality ofinsulating interlayers by alternately stacking one of the sacrificiallayers and one of the insulating interlayers on a substrate a pluralityof times, forming a first opening through the mold structure to exposethe substrate, forming a plurality of first blocking layers by oxidizingportions of the sacrificial layers exposed by the first opening,sequentially forming a charge trapping layer, a tunnel insulation layerand a first semiconductor layer on the substrate and a sidewall of themold structure in the first opening, partially etching portions of thefirst semiconductor layer, the charge trapping layer and the tunnelinsulation layer on the substrate in the first opening to form a firstsemiconductor layer pattern, a charge trapping layer pattern and atunnel insulation layer pattern on the sidewall of the mold structure,forming a second semiconductor layer on the first semiconductor layerpattern and the substrate to form a second semiconductor layer patternincluding the first semiconductor layer pattern and the secondsemiconductor layer, partially removing the sacrificial layers and theinsulating interlayers to form a second opening, removing thesacrificial layers to form grooves between the insulating interlayers,and forming a plurality of control gate electrodes in the grooves.

According to at least one example embodiment, a method of manufacturinga vertical semiconductor device includes forming a first insulatinglayer, forming a first sacrificial layer including a first material onthe first insulating layer, forming a second insulating layer on thefirst sacrificial layer, forming a second sacrificial layer including asecond material on the second insulating layer, removing part of thefirst insulating layer, the first sacrificial layer, the secondinsulating layer and the second sacrificial layer to form a sidewall,oxidizing portions of the first and second materials exposed along thesidewall, and removing unoxidized portions of the first and secondmaterials.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings. FIGS. 1-8 represent non-limiting, example embodiments asdescribed herein.

FIG. 1 is a circuit diagram illustrating vertical semiconductor devicesin accordance with example embodiments;

FIGS. 2A-2K are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with exampleembodiments;

FIG. 3A is a partial, enlarged cross-sectional diagram illustrating ablocking layer, a charge trapping layer, a tunnel insulation layer and afirst semiconductor layer formed in accordance with the exampleembodiments;

FIG. 3B is a partial, enlarged cross-sectional diagram illustrating ablocking layer, a charge trapping layer, a tunnel insulation layer and afirst semiconductor layer formed by a general method;

FIGS. 4A-4E are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with otherexample embodiments;

FIGS. 5A-5C are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with furtherexample embodiments;

FIG. 6 is a block diagram illustrating memory cards including verticalsemiconductor devices in accordance with example embodiments;

FIG. 7 is a block diagram illustrating systems including verticalsemiconductor devices in accordance with example embodiments; and

FIG. 8 is a block diagram illustrating portable devices includingvertical semiconductor devices in accordance with example embodiments.

It should be noted that these figures are intended to illustrate thegeneral characteristics of methods, structure and/or materials utilizedin certain example embodiments and to supplement the written descriptionprovided below. These drawings are not, however, to scale and may notprecisely reflect the precise structural or performance characteristicsof any given embodiment, and should not be interpreted as defining orlimiting the range of values or properties encompassed by exampleembodiments. For example, the relative thicknesses and positioning ofmolecules, layers, regions and/or structural elements may be reduced orexaggerated for clarity. The use of similar or identical referencenumbers in the various drawings is intended to indicate the presence ofa similar or identical element or feature.

DETAILED DESCRIPTION

Example embodiments will now be described more fully with reference tothe accompanying drawings, in which example embodiments are shown.Example embodiments may, however, be embodied in many different formsand should not be construed as being limited to the embodiments setforth herein; rather, these embodiments are provided so that thisdisclosure will be thorough and complete, and will fully convey theconcept of example embodiments to those of ordinary skill in the art. Inthe drawings, the thicknesses of layers and regions are exaggerated forclarity. Like reference numerals in the drawings denote like elements,and thus their description will be omitted.

It will be understood that when an element or layer is referred to asbeing “on,” “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like numerals refer to likeelements throughout. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items. Otherwords used to describe the relationship between elements or layersshould be interpreted in a like fashion (e.g., “between” versus“directly between,” “adjacent” versus “directly adjacent,” “on” versus“directly on”).

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. Thus, a first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the example embodiments.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises”, “comprising”, “includes” and/or “including,” if usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Example embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofidealized example embodiments (and intermediate structures). As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, example embodiments should not be construed as limitedto the particular shapes of regions illustrated herein but are toinclude deviations in shapes that result, for example, frommanufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. Thus, the regions illustrated in the figures are schematicin nature and their shapes are not intended to illustrate the actualshape of a region of a device and are not intended to limit the scope ofthe example embodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 is a circuit diagram illustrating vertical semiconductor devicesin accordance with example embodiments. Referring to FIG. 1, a verticalsemiconductor device 10 may include a plurality of strings. Each of theplurality of strings may include a plurality of memory cells stacked ina vertical direction relative to a substrate (not shown). Each of thestrings may include cell transistors and selection transistors connectedin series to one another. Each of the cell transistors may include, forexample, a tunnel insulation layer pattern, a charge trapping layerpattern, a dielectric layer pattern and a control gate electrode. Thecontrol gate electrodes of the cell transistors may serve as word linesW/L0-W/L3.

The cell transistors may be connected in series to one another in avertical direction. A ground selection transistor (GST) and a stringselection transistor (SST) may be at ends of each string, respectively.Each of the strings may be connected at one end to a bit line (B/L). Acontrol gate electrode of the GST may serve as a ground selection line(GSL), and a control gate electrode of the SST may serve as a stringselection line (SSL). Each string may include a plurality of GSTs and aplurality of SSTs connected in series. A common source line (CSL) may beconnected to the GST. The word lines at the same level may beelectrically connected to each other.

FIGS. 2A-2K are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with exampleembodiments. Referring to FIG. 2A, a pad insulation layer 102 may beformed on a substrate 100. The pad insulation layer 102 may be formedby, for example, a thermal oxidation process on the substrate 100. Thepad insulation layer 102 may reduce stress that may be generated when afirst sacrificial layer 104 a is formed directly on the substrate 100.

Sacrificial layers 104 and insulating interlayers 106 may be repeatedlyand alternately formed on the pad insulation layer 102 in a directionvertical to a top surface of the substrate 100. The first sacrificiallayer 104 a may be formed on the pad insulation layer 102 and a firstinsulating interlayer 106 a may be formed on the first sacrificial layer104 a. Other sacrificial layers 104 b, 104 c, 104 d, 104 e and 104 f andinsulating interlayers 106 b, 106 c, 106 d, 106 e and 106 f may besequentially and alternately formed on one another. The sacrificiallayers 104 and the insulating interlayers 106 may be formed by, forexample, a chemical vapor deposition (CVD) process and/or an atomiclayer deposition (ALD) process.

The uppermost insulating interlayer 106 f may be damaged and/or removeddue to subsequent processing. The uppermost insulating interlayer 106 fmay be formed to be the thickest insulating interlayer among theinsulating interlayers 106. The sacrificial layers 104 may be formedusing a material with etch selectivity to the insulating interlayers106. The sacrificial layers 104 may be formed using a material with etchselectivity to a material of a semiconductor pattern (e.g.,polysilicon).

The sacrificial layers 104 may be formed using a material that may berapidly removed by a wet etch process so that the insulating interlayers106 are exposed to an etch solution for a short and/or reduced time. Theinsulating interlayers 106 may be prevented from being damaged and/orremoved by the etch solution during the wet etch process for removingthe sacrificial layers 104, or damage and removal may be reduced.According to at least one example embodiment, the insulating interlayers106 may include silicon oxide and the sacrificial layers 104 may includesilicon nitride.

A transistor may be formed in a space from which a sacrificial layer 104is removed, and the number of the sacrificial layers 104 may be greaterthan or equal to the number of the transistors of a string includingcell transistors and selection transistors. In such example embodiments,the string may be described as including 4 cell transistors and 2selection transistors for purposes of example only. The number of thecell transistors and the selection transistors are not limited.

Referring to FIG. 2B, a mask pattern (not shown) may be formed on theuppermost insulating interlayer 106 f. The insulating interlayers 106,the sacrificial layers 104 and the pad insulation layer 102 may bepartially removed using the mask pattern as an etch mask to faun a firstopening 108 to expose a top surface of the substrate 100. According toexample embodiments, a plurality of first openings 108 may be formed,and the first openings 108 may be formed, for example, with island shapefrom each other. A mold structure 109 with the first openings 108 may beformed.

A semiconductor pattern may be formed in the first openings 108 to serveas a channel region. The first openings 108 may be formed regularly inboth of first and second directions that are substantially perpendicularto each other. Sidewalls of the insulating interlayers 106 and thesacrificial layers 104 may be exposed by the first opening 108.

Referring to FIG. 2C, the sidewalls of the sacrificial layers 104exposed by the first opening 108 may be oxidized to form blocking layers110. The sidewalls of the sacrificial layers 104 may include siliconnitride and may be treated in an oxidizing atmosphere to form theblocking layers 110. For example, the blocking layers 110 may be formedby a radical oxidizing process. If the blocking layer 110 is formed by adeposition process on an inner wall of the first opening 108, thediameter or the width of the first opening 108 may be decreased by twotimes the thickness of the blocking layer 110.

According to the example embodiments, the blocking layer 110 may beformed by oxidizing a portion of the sacrificial layer 104. A diameteror a width of the first opening 108 may not be reduced or may remainnearly constant after forming the blocking layer 110. For example,difference between a width of the first opening 108 after forming theblocking layer 110 and an initial width of the first opening 108 may besmaller than a thickness of the blocking layer 110.

Referring to FIG. 2D, a charge trapping layer 112 may be formed on theuppermost insulating interlayer 106 f, and on a bottom and sidewallinside the first opening 108. The charge trapping layer 112 may beformed to include, for example, silicon nitride deposited by chemicalvapor deposition (CVD). A tunnel insulation layer 114 may be formed onthe charge trapping layer 112. The charge trapping layer may include,for example, silicon oxide deposited by CVD. Referring to FIG. 2E, afirst semiconductor layer 116 (e.g., polysilicon) may be formed on thetunnel insulation layer 114. The first semiconductor layer 116 may beformed to partially fill the first opening 108. The first semiconductorlayer 116 may be formed conformally to the bottom and sidewall insidethe first opening 108 and a top surface of the mold structure 109.

FIG. 3A is a partial, enlarged cross-sectional diagram illustrating ablocking layer 110, a charge trapping layer 112, a tunnel insulationlayer 114 and a first semiconductor layer 116 formed in accordance withexample embodiments. Referring to FIG. 3A, an initial width of the firstopening 108 may be represented by “D1” The width of the first opening108 may not be reduced by forming the blocking layer 110. The firstopening 108 may be of sufficient width (represented by “D2”) for forminga semiconductor pattern therein even after forming the charge trappinglayer 112, the tunnel insulation layer 114 and the first semiconductorlayer 116 (e.g., sequentially forming) on the blocking layer 110.Subsequent processes (e.g., deposition and/or etch processes) in thefirst opening 108 may be performed more easily.

FIG. 3B is a partial, enlarged cross-sectional diagram illustrating ablocking layer 110 a, a charge trapping layer 112 a, a tunnel insulationlayer 114 a and a first semiconductor layer 116 a formed by a generalmethod. Referring to FIG. 3B, an initial thickness of the first opening108 may be represented by “D1” as in FIG. 3A. If the blocking layer 110a is formed by a deposition process, the width of the first opening 108may be reduced by two times the thickness of the blocking layer 110 a. Awidth of the first opening 108 after forming the charge trapping layer112 a, the tunnel insulation layer 114 a and the first semiconductorlayer 116 a may be represented by “D3.” The width D3 in FIG. 3B may beless than the width D2 in FIG. 3A.

Referring to FIG. 2F, upper and bottom portions of the firstsemiconductor layer 116 may be partially removed by an etch-back processto form a first semiconductor layer pattern 116 a on the sidewall of thefirst opening 108. The shape of the first semiconductor layer pattern116 a may be a hollow cylindrical shape. The first opening 108 may be ofsufficiently large width even after forming the first semiconductorlayer 116. An etch gas for partially removing the first semiconductorlayer 116 may be diffused rapidly onto the bottom portion of the firstsemiconductor layer 116. Defects occurring when the first semiconductorlayer 116 remains on a bottom surface of the first opening 108 may bereduced and the etch-back process may be performed more easily.

Portions of the tunnel insulation layer 114 and the charge trappinglayer 112 on the bottom surface of the first opening 108 may be alsoremoved to expose a top surface of the substrate 100. A preliminarycharge trapping layer pattern 112 a and a preliminary tunnel insulationlayer pattern 114 a may be formed.

Referring to FIG. 2G bottom portions of the preliminary charge trappinglayer pattern 112 a and the preliminary tunnel insulation layer pattern114 a which are exposed by a lower portion of the first opening 108 maybe partially removed by a wet etch process. Portions of the preliminarycharge trapping layer pattern 112 a and the preliminary tunnelinsulation layer pattern 114 a which are formed on the sidewall of thefirst opening 108 may not be removed by the wet etch process because thefirst semiconductor layer pattern 106 a may be formed thereon.

The bottom portions of the preliminary charge trapping layer pattern 112a and the preliminary tunnel insulation layer pattern 114 a which maynot be covered by the first semiconductor layer pattern 106 a may beremoved to expose the top surface of the substrate 100. A chargetrapping layer pattern 112 b and a tunnel insulation layer pattern 114 bmay be formed sequentially on the sidewall of the first opening 108. Thecharge trapping layer pattern 112 b and the tunnel insulation layerpattern 114 b may not make contact with the top surface of the substrate100 and may be spaced apart therefrom.

Referring to FIG. 2H, a second semiconductor layer 116 b′ (e.g.,polysilicon) may be formed on the first semiconductor pattern 116 a anda top surface of the mold structure 109. The second semiconductor layer116 b′ may be also formed on the bottom surface of the first opening 108to make contact with the substrate 100. When a voltage is applied to thesubstrate 100, data may be erased by a Fowler-Nordheim (FN) tunnelingeffect because the second semiconductor layer 116 b′ may be in contactthe substrate 100. Data may be erased in a short and/or reduced time ina vertical semiconductor device without deteriorating the device duringan operation for erasing data.

Referring to FIG. 2I, a filling layer (not shown) may be formed tosufficiently fill a remaining space of the first opening 108 afterforming the second semiconductor layer 116 b′. The filling layer may beformed to include a material with high etch selectivity to thesacrificial layers 104 (e.g., a silicon oxide). An upper portion of thefilling layer may be partially removed by an etch-back process so that atop surface of the filling layer may be lower than that of the moldstructure 109. A filling layer pattern 118 may be formed to partiallyfill the first opening 108.

A third semiconductor layer (e.g., polysilicon) may be formed on thefilling layer pattern and the mold structure 109 to sufficiently fillthe first opening 108. Upper portions of the second and thirdsemiconductor layers may be planarized until the top surface of the moldstructure is exposed to form second and third semiconductor layerpatterns 116 b and 116 c, respectively. By performing the processes, asemiconductor pattern 117 including the first, second and thirdsemiconductor layer patterns 116 a, 116 b and 116 c may be formed in thefirst opening 108. The semiconductor pattern 117 may serve as a channelof a string.

The sacrificial layers 104 and the insulating interlayers 106 may bepartially etched to form a second opening 126. For example, a maskpattern (not shown) may be formed on the uppermost insulating interlayer106 f. The sacrificial layers 104 and the insulating interlayers 106 maybe partially removed using the mask pattern as an etch mask to form thesecond opening 126. According to at least one example embodiment, aplurality of second openings 126 may be formed in the first direction,and each second opening 126 may extend in the second direction betweenthe first openings 108.

The sacrificial layers 104 exposed by the second opening 126 may beremoved by a wet etch process. Only the insulating interlayers 106 mayremain surrounding the semiconductor pattern 117, and the insulatinginterlayers 106 may be spaced apart from one another in a thirddirection (e.g., substantially perpendicular to a top surface of thesubstrate 100). A groove 122 may be defined by a space from which thesacrificial layers 104 are removed. According to example embodiments, aplurality of grooves 122 may be formed. The blocking layers 110 may beexposed by the grooves 122.

Referring to FIG. 2J, a conductive layer (not shown) may be formed tosufficiently fill the grooves 122. The conductive layer may partiallyfill the second opening 120, and thereby may be easily removed by asubsequent process. The conductive layer may be formed to include aconductive material with good step coverage to prevent or reduce voidsfrom being generated in the conductive layer. The conductive materialmay be formed to include, for example, a metal and/or a metal nitride oflow resistance (e.g., tungsten, tungsten nitride, titanium, titaniumnitride, tantalum, tantalum nitride and/or platinum). According to atleast one example embodiment, the conductive layer may be formed as amulti-layered structure. For example, the conductive layer may include abarrier metal layer and a metal layer sequentially stacked. The barriermetal layer may include, for example, titanium, titanium nitride,tantalum and/or tantalum nitride. The metal layer may include, forexample, tungsten.

A portion of the conductive layer in the second opening 126 may beremoved by a dry etch or wet etch process. The conductive layer mayremain only in the grove 122 to form a control gate electrode 124.According to example embodiments, a plurality of control gate electrodes124 may be formed in the grooves 122, respectively. Each control gateelectrode 124 may include a barrier metal layer pattern 123 a on theinner wall of the groove 122 and the blocking layer 110, and a metallayer pattern 123 b on the barrier metal layer pattern 123 a.

Referring to FIG. 2K, an insulation layer (not shown) may be formed onthe mold structure 109 and the substrate 100 to fill the second opening126. The insulation layer may be partially planarized to form aninsulation layer pattern 128 in the second opening 126. An upperinsulating interlayer 130 may be formed on top surfaces of thesemiconductor pattern 117, the filling layer pattern 118, the insulationlayer pattern 128 and the uppermost insulating interlayer 106 f. A bitline contact 132 may be formed through the upper insulating interlayer130 to contact the top surface of the semiconductor pattern 117. A bitline 134 may be formed on the upper insulating interlayer 130 to contactthe bit line contact 134. The bit line 146 may be linearly shaped andmay extend in the first direction. The bit line 146 may be electricallyconnected to the semiconductor pattern 117 via the bit line contact 132.

In accordance with example embodiments, a blocking layer 110 may beformed by partially oxidizing a sacrificial layer 104. The diameter orthe width of the first opening 108 may not be reduced by the blockinglayer 110 so that subsequent deposition and/or etch processes may beeasily performed in the first opening 108. An initial diameter or widthof the first opening 108 may be decreased to improve the integrationdensity and reliability of a semiconductor device.

FIGS. 4A-4E are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with otherexample embodiments. Referring to FIG. 4A, processes substantially thesame as or similar to those illustrated in FIGS. 2A and 2B may beperformed to form a preliminary mold structure with a first opening 140.The preliminary mold structure may include sacrificial layers 104 andinsulating interlayers 105 which are repeatedly and alternately stackedon the pad insulation layer 102 as shown in FIG. 2B. Lateral portions ofthe insulating interlayers 105 exposed by the first opening 140 may bepartially removed to form a mold structure 109. The sacrificial layers104 may protrude from sidewalls of the insulating interlayers 105.

Referring to FIG. 4B, the protruded portions of the sacrificial layers104 may be partially oxidized to form blocking layers 142. The protrudedlateral portions of the sacrificial layers 104 including silicon nitridemay be treated in an oxidizing atmosphere to form the blocking layers142. For example, the blocking layers 142 may be formed by a radicaloxidizing process. The lateral portions of the sacrificial layers 104may protrude from the sidewalls of insulating interlayers 105 to beeasily oxidized. Edge portions of the sacrificial layers 104 may also beoxidized into a curved shape so that a surface area of the blockinglayers 142 may be a larger surface area.

The blocking layers 142 may be formed by the oxidizing process and notby an additional deposition process. A diameter or a width of the firstopening 140 may not be decreased after forming the blocking layers 142.

A charge trapping layer pattern 144 and a tunnel insulation layerpattern 146 may be formed on the sidewalls of the insulating interlayers105 and on the blocking layers 142. A first semiconductor layer pattern148 a (e.g., polysilicon) may be formed on the tunnel insulation layerpattern 146 and a second semiconductor layer pattern 148 b (e.g.,polysilicon) may be formed on the first semiconductor layer pattern 148a. A top surface of the substrate 100 may be exposed by the firstopening 140. A filling layer pattern 150 may be formed on the secondsemiconductor layer pattern 148 b to partially fill the first opening140.

A third semiconductor layer pattern 148 c (e.g., polysilicon) may beformed on the filling layer pattern 150 to fill a remaining portion ofthe first opening 140. A semiconductor pattern 148 including the first,second and third semiconductor layer patterns 148 a, 148 b and 148 c maybe formed in the first opening 140. The charge trapping layer pattern144, the tunnel insulation layer pattern 146, the filling layer pattern150 and the semiconductor pattern 148 may be formed by processessubstantially the same as or similar to those illustrated with referenceto FIGS. 2D-2I.

Referring to FIG. 4D, the sacrificial layers 104 and the insulatinginterlayers 105 may be partially etched to form a second opening 152.According to example embodiments, a plurality of second openings 152 maybe formed in a first direction, and each second opening 152 may extendin a second direction substantially perpendicular to the firstdirection. The sacrificial layers 104 exposed by the second opening 152may be removed by a wet etch process to form grooves 156. The controlgate electrodes 158 may be formed to fill the grooves 156.

According to at least one example embodiment, each control gateelectrode 158 may include a barrier metal layer pattern on an inner wallof the groove 156 and the blocking layer 142, and a metal layer patternon the barrier metal layer pattern. The control gate electrodes 158 mayinclude a curved surface to reduce an electric field concentrationthereto. The second opening 152 and the control gate electrodes 158 maybe formed by processes substantially the same as or similar to thoseillustrated with reference to FIGS. 2I and 2J.

Referring to FIG. 4E, an insulation layer (not shown) may be formed tofill the second opening 152, and may be partially planarized to form aninsulation layer pattern 154 in the second opening 152. By performingprocesses substantially the same as or similar to those illustrated inFIG. 2K, an upper insulating interlayer 162 may be formed on topsurfaces of the semiconductor pattern 148, the filling layer pattern150, the insulation layer pattern 154 and the uppermost insulatinginterlayer 105 f. A bit line contact 164 may be formed through the upperinsulating interlayer 162 to contact the top surface of thesemiconductor pattern 148. A bit line 166 may be formed on the upperinsulating interlayer 162 to contact the bit line contact 164.

FIGS. 5A-5C are cross-sectional diagrams illustrating methods ofmanufacturing vertical semiconductor devices in accordance with otherexample embodiments. A vertical semiconductor device may be of astructure substantially the same as or similar to that illustrated inFIG. 2K except that an upper blocking layer may be further aimed on theblocking layer. Referring to FIG. 5A, the structure illustrated in FIG.2I may be formed by processes substantially the same as or similar tothose illustrated with reference to FIGS. 2A-2I. An upper blocking layer170 may be formed on the blocking layer 110 and the insulatinginterlayers 106.

The upper blocking layer 170 may be formed to include, for example, ahigh dielectric constant metal oxide. For example, the upper blockinglayer 170 may be formed to include an aluminum oxide. A blocking layerstructure 171 including the blocking layer 110 and the upper blockinglayer 170 may be formed on the inner wall of the grooves 122. By furtherforming the upper blocking layer 170 using a high-K metal oxide,operation characteristics of the vertical semiconductor device may beimproved.

Referring to FIG. 5B, a conductive layer (not shown) may be formed tosufficiently fill the grooves 122. According to at least one exampleembodiment, a barrier metal layer (not shown) including, for example,titanium, titanium nitride, tantalum and/or tantalum nitride, may beformed. A metal layer (not shown) including, for example, tungsten maybe formed on the barrier metal layer. A portion of the conductive layerformed in the second opening 126 may be removed using a dry etch processand/or a wet etch process.

The conductive layer may remain only in the groves 122 to form controlgate electrodes 172. The control gate electrodes 172 may include abarrier metal layer pattern 173 a on the inner wall of the groove 122and a metal layer pattern 173 b on the barrier metal layer pattern 173a. Processes substantially the same as or similar to those illustratedin FIG. 2K may be performed to manufacture a vertical semiconductordevice illustrated in FIG. 5C.

FIG. 6 is a block diagram illustrating memory cards including verticalsemiconductor devices in accordance with example embodiments. Referringto FIG. 6, a memory card may include a memory 510 connected to a memorycontroller 520. The memory 510 may include a vertical semiconductordevice according to example embodiments described with respect to FIGS.1-5C. The memory controller 520 may supply input signals for controllingthe operation of the memory 510.

FIG. 7 is a block diagram illustrating systems including verticalsemiconductor devices in accordance with example embodiments. A systemmay include a memory 510 connected to a host 700. The memory 510 mayinclude a vertical semiconductor device according to example embodimentsdescribed with respect to FIGS. 1-5C. The host 700 may includeelectronic devices, for example, a personal computer, a camera, a mobiledevice, a game machine and/or a telecommunication device. The host maysupply input signals for controlling or operating the memory 510, andthe memory 510 may be used as a data storage medium.

FIG. 8 is a block diagram illustrating portable devices includingvertical semiconductor devices in accordance with example embodiments. Aportable device 600 may be, for example, an MP3 player, video player,and/or a combination video and audio player. The portable device 600 mayinclude a memory 510 and a memory controller 520. The memory 510 mayinclude the vertical semiconductor device, according to exampleembodiments described with respect to FIGS. 1-5C. The portable device600 may also include an encoder/decoder EDC 610, a presentationcomponent 620 and an interface 670. Data (e.g., video and/or audio) maybe input to and output from the memory 510 via the memory controller 520by the EDC 610.

While example embodiments have been particularly shown and described, itwill be understood by one of ordinary skill in the art that variationsin form and detail may be made therein without departing from the spiritand scope of the claims.

What is claimed is:
 1. A method of manufacturing a verticalsemiconductor device, comprising: forming a mold structure including aplurality of sacrificial layers and a plurality of insulatinginterlayers by alternately stacking one of the sacrificial layers andone of the insulating interlayers on a substrate a plurality of times;forming a first opening through the mold structure to expose thesubstrate; forming a plurality of first blocking layers by oxidizingportions of the sacrificial layers exposed by the first opening;sequentially forming a charge trapping layer, a tunnel insulation layerand a first semiconductor layer on the substrate and a sidewall of themold structure in the first opening; partially etching portions of thefirst semiconductor layer, the charge trapping layer and the tunnelinsulation layer on the substrate in the first opening to form a firstsemiconductor layer pattern, a charge trapping layer pattern and atunnel insulation layer pattern on the sidewall of the mold structure;forming a second semiconductor layer on the first semiconductor layerpattern and the substrate to form a second semiconductor layer patternincluding the first semiconductor layer pattern and the secondsemiconductor layer; partially removing the sacrificial layers and theinsulating interlayers to form a second opening; removing thesacrificial layers to form grooves between the insulating interlayers;and forming a plurality of control gate electrodes in the grooves. 2.The method of claim 1, wherein the sacrificial layers include a siliconnitride.
 3. The method of claim 2, wherein the first blocking layersinclude a silicon oxide.
 4. The method of claim 1, wherein the forming aplurality of first blocking layers includes forming the first blockinglayers using a radical oxidation process.
 5. The method of claim 1,wherein a difference between a first width of the first opening prior tothe forming the first blocking layers and a second width of the firstopening after the forming the first blocking layers is less than athickness of each blocking layer.
 6. The method of claim 1, wherein thepartially etching portions of the first semiconductor layer, the chargetrapping layer and the tunnel insulation layer includes: etching aportion of the first semiconductor layer on the substrate in the firstopening to form the first semiconductor layer pattern on the sidewall;and etching portions of the charge trapping layer and the tunnelinsulation layer on the substrate in the first opening to expose thesubstrate.
 7. The method of claim 1, further comprising: forming asecond blocking layer between each first blocking layer and acorresponding one of the control gate electrodes, the second blockinglayer including a metal oxide.
 8. The method of claim 1, wherein theforming a plurality of control gate electrodes includes: forming aconductive layer to at least partially fill the grooves and the secondopening; and removing a part of the conductive layer in the secondopening so that the conductive layer remains only in the grooves.
 9. Themethod of claim 8, wherein the forming a plurality of control gateelectrodes includes forming the conductive layer by sequentiallydepositing a barrier metal layer and a metal layer.
 10. The method ofclaim 9, wherein: the barrier metal layer includes one of titanium and atitanium nitride; and the metal layer includes tungsten.
 11. The methodof claim 7, wherein the second blocking layer includes an aluminumoxide.
 12. The method of claim 11, wherein the forming a second blockinglayer includes forming the second blocking layer conformally to thefirst blocking layers and surfaces of the insulating interlayers insidethe grooves.
 13. The method of claim 1, wherein the forming a secondsemiconductor layer includes forming the second semiconductor layer onthe sidewall of the mold structure and on the substrate in the firstopening such that the first opening is not completely filled.
 14. Themethod of claim 13, further comprising: forming a filling layer on thesecond semiconductor layer pattern to fill the first opening.
 15. Themethod of claim 6, wherein the partially etching portions of the firstsemiconductor layer, the charge trapping layer and the tunnel insulationlayer includes etching the charge trapping layer and the tunnelinsulation layer using a wet etch process.
 16. A method of manufacturinga vertical semiconductor device, comprising: forming a first insulatinglayer; forming a first sacrificial layer including a first material onthe first insulating layer; forming a second insulating layer on thefirst sacrificial layer; forming a second sacrificial layer including asecond material on the second insulating layer; removing part of thefirst insulating layer, the first sacrificial layer, the secondinsulating layer and the second sacrificial layer to form a sidewall;oxidizing portions of the first and second materials exposed along thesidewall; and removing unoxidized portions of the first and secondmaterials.
 17. The method of claim 16, further comprising: forming acharge trapping layer on the oxidized portions of the first and secondmaterials; forming a tunnel insulation layer on the charge trappinglayer; forming a channel extending along an entire length of thesidewall on the tunnel insulation layer; forming a first control gate ona side of the oxidized portion of the first material opposite the chargetrapping layer; and forming a second control gate on a side of theoxidized portion of the second material opposite the charge trappinglayer.
 18. The method of claim 16, wherein the oxidizing portions of thefirst and second materials includes radical oxidation of the first andsecond materials.
 19. The method of claim 18, wherein at least one ofthe first and second materials is a silicon nitride.
 20. A method ofmanufacturing a portable device including a memory and a memorycontroller, comprising: the method of manufacturing a verticalsemiconductor device of claim 1.